sq7415aenw www.vishay.com vishay siliconix s15-2138, rev. a, 14-sep-15 1 document number: 76598 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive p-channel 60 v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? low thermal resistance powerpak ? 1212-8w package with 1.07 mm profile ? aec-q101 qualified ? wettable flank terminals ? 100 % r g and uis tested ? material categorization: for definitions of co mpliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr4 material). d. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. product summary v ds (v) -60 r ds(on) ( ) at v gs = -10 v 0.065 r ds(on) ( ) at v gs = -4.5 v 0.090 i d (a) -16 configuration single package powerpak 1212-8w powerpak ? 1212-8w s ingle top view 1 3.3 mm 3.3 mm 3.3 mm 3 mm bottom view 1 s 2 s 3 s 4 g d 8 d 7 d 6 d 5 1 s s s s g s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -60 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d -16 a t c = 125 c -11 continuous source curre nt (diode conduction) a i s -16 pulsed drain current b i dm -64 single pulse avalanche current l = 0.1 mh i as -23 single pulse avalanche energy e as 26 mj maximum power dissipation b t c = 25 c p d 53 w t c = 125 c 17 operating junction and storage temperature range t j , t stg -55 to +175 c soldering recommendations (peak temperature) d 260 thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 81 c/w junction-to-case (drain) r thjc 2.8
sq7415aenw www.vishay.com vishay siliconix s15-2138, rev. a, 14-sep-15 2 document number: 76598 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = -250 a -60 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = -250 a -1.5 -2.0 -2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = -60 v - - -1 a v gs = 0 v v ds = -60 v, t j = 125 c - - -50 v gs = 0 v v ds = -60 v, t j = 175 c - - -150 on-state drain current a i d(on) v gs = -10 v v ds -5 v -15 - - a drain-source on-s tate resistance a r ds(on) v gs = -10 v i d = -5.7 a - 0.050 0.065 v gs = -10 v i d = -5.7 a, t j = 125 c - - 0.112 v gs = -10 v i d = -5.7 a, t j = 175 c - - 0.138 v gs = -4.5 v i d = -4.4 a, - 0.070 0.090 forward transconductance b g fs v ds = -15 v, i d = -5.7 a - 13 - s dynamic b input capacitance c iss v gs = 0 v v ds = -25 v, f = 1 mhz - 1108 1385 pf output capacitance c oss - 132 165 reverse transfer capacitance c rss -84105 total gate charge c q g v gs = -10 v v ds = -30 v, i d = -5.7 a -25.538 nc gate-source charge c q gs -3.6- gate-drain charge c q gd -6.7- gate resistance r g f = 1 mhz 3 6 9 turn-on delay time c t d(on) v dd = -30 v, r l = 30 i d ? -1 a, v gen = -10 v, r g = 1 -914 ns rise time c t r -914 turn-off delay time c t d(off) -3756 fall time c t f -812 source-drain diode ratin g s and characteristics b pulsed current a i sm ---64a forward voltage v sd i f = -6 a, v gs = 0 v - -0.85 -1.2 v
sq7415aenw www.vishay.com vishay siliconix s15-2138, rev. a, 14-sep-15 3 document number: 76598 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 4 8 12 16 20 0 1 2 3 4 5 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 5 v v gs = 3 v v gs = 4 v v gs = 2 v 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = - 55 c t c = 125 c 0.00 0.05 0.10 0.15 0.20 0.25 0 4 8 12 16 20 r d s (on) -on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0 4 8 12 16 20 0 3 6 9 12 15 g f s -tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 400 800 1200 1600 2000 0 10 20 30 40 50 60 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss
sq7415aenw www.vishay.com vishay siliconix s15-2138, rev. a, 14-sep-15 4 document number: 76598 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) gate char g e threshold volta g e on-resistance vs. gate-to-source volta g e on-resistance vs. junction temperature source drain diode forward volta g e drain source breakdown vs . junction temperature 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) i d = 5.7 a v d s = 30 v -0.5 -0.2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 0.0 0.1 0.2 0.3 0.4 0.5 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 5.7 a v gs = 4.5 v v gs s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -80 -76 -72 -68 -64 -60 - 50 - 25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma
sq7415aenw www.vishay.com vishay siliconix s15-2138, rev. a, 14-sep-15 5 document number: 76598 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operatin g area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 100 m s , 1 s ,10 s , dc i d limited 0.2 0.1 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 81 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01
sq7415aenw www.vishay.com vishay siliconix s15-2138, rev. a, 14-sep-15 6 document number: 76598 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-case (25 c) are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76598 . 1 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 10 -4 10 -3 10 -2 10 -1 10 -5
ordering information www.vishay.com vishay siliconix revision: 25-aug-15 1 document number: 66697 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? 1212-8 and powerpak 1212-8w ordering codes for the sq rugged series power mosfets in the powerpak 1212-8 and powerpak 1212-8w packages: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sq7414aen sq7414aen-t1-ge3 sq7414aen-t1_ge3 sq7414aenw - sq7414aenw-t1_ge3 sq7415aen sq7415aen-t1-ge3 sq7415aen-t1_ge3 sq7415aenw - sq7415aenw-t1_ge3 sqs401en sqs401en-t1-ge3 sqs401en-t1_ge3 sqs401enw - sqs401enw-t1_ge3 sqs405en sqs405en-t1-ge3 sqs405en-t1_ge3 sqs405enw - sqs405enw-t1_ge3 sqs420en sqs420en-t1-ge3 sqs420en-t1_ge3 sqs423en sqs423en-t1-ge3 sqs423en-t1_ge3 sqs460en sqs460en-t1-ge3 sqs460en-t1_ge3 sqs462en sqs462en-t1-ge3 sqs462en-t1_ge3 sqs482en sqs482en-t1-ge3 sqs482en-t1_ge3 sqs484en sqs484en-t1-ge3 sqs484en-t1_ge3 sqs490en sqs490en-t1-ge3 sqs490en-t1_ge3 sqs840en sqs840en-t1-ge3 sqs840en-t1_ge3 sqs850en sqs850en-t1-ge3 sqs850en-t1_ge3
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